Optical performance of Tin doped Indium Oxide (ITO) thin films prepared by sol gel dip coating techniques using acrylamide route

At present various oxide of metal semiconductors play a significant role in the field electronics. Most semiconductor devices exploit special characteristics junction between p-type and n-type semiconductor. These can be made extremely small size they are incredibly fast their response. Generally have good reflectivity electromagnetic region infrared visible radiation. Indium material doped with tin (ITO) is recently used substrate for applications, because it has properties low resistivity high optical transmittance region. In this paper, we prepare ITO films different concentration (5%, 10%, 15%, 20%, 30%, 40%, 50%, 60% 70%) using acrylamide sol gel dip coated method its results were reported. TCO materials electrical conductivity transparency, also band gap 3.5 4.3 eV. An X-ray study indicates all prepared samples had bixbyte structure. Optical behaviour understood near spectrum. Some parameters refractive index, extinction coefficient dielectric constant calculated from data received UV transmission studies. Using W-D model dispersion index was calculated. The gap, oscillator energy, energy N/m* ratio estimated well suitable dye sensitized solar cell sensor application.